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Si N^+/P/P^+太阳电池的数值模拟与分析 被引量:8

NUMERICAL SIMULATION AND ANALYSIS FOR Si N^+/P/P^+ SOLAR CELLS
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摘要 提出了单晶硅N^+/P/P^+太阳电池的物理模型,采用数值模拟方法对其在AM1.5太阳光入射下的电池特性进行了模拟计算,分析了基区少子扩散长度和基区厚度对短路电流密度和转换效率的影响,着重分析了基区少子寿命对转换效率等电池特性的影响。模拟结果表明,在综合考虑了各种损耗机制的前提下,转换效率等电池特性都随基区少子寿命和少子扩散长度的增加而增大,并且从电池输出特性与基区少子寿命的关系曲线上可以方便地获得少子寿命所对应的短路电流密度、开路电压、填充因子和转换效率的值,为实验提供有力的理论依据和参考。 A physical model of front-illuminated N^+/P/P^+ mono-crystalline silicon solar cells was presented; the various losses were also taken into account at the same time in the model. The effects of the thickness and minority diffusion length in base region on short-circuit current density and efficiency were studied with numerical simulation. Especially, the effects of minority carrier lifetime in base region on the characteristics of the solar cells were studied. It is found that all characteristics of solar cells increase with the increasing of minority cartier lifetime. It is very easy to get the values of short-circuit current density, open-circuit voltage, fill factor and efficiency from the corresponding curves. This will be a theoretical guide for the study of solar cells.
作者 张妹玉 陈朝
出处 《太阳能学报》 EI CAS CSCD 北大核心 2008年第10期1267-1273,共7页 Acta Energiae Solaris Sinica
基金 福建省科技重大专项(2007HZ0005/2007HZ0005-2) 福建省半导体照明工程技术研究中心资助项目(2006H0092)
关键词 硅太阳电池 光电转换效率 少子寿命 数值模拟 silicon solar cells photoelectron conversion efficiency minority cartier lifetime numerical simulation
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