摘要
对难熔金属及其硅化物的形成、特性进行了研究。采用溅射难熔金属、热硅化反应的方法，解决了ＶＬＳＩ工艺中由于ＭＯＳ电路图形尺寸缩小带来的栅电阻增大的问题；采用硅化物阻挡层和Ａ１多层金属布线方法，解决了欧姆接触和铝的电迁移问题。
In this paper , we studied the formation and properties of refractory metal sili- cide. By the means of sputtering refractory metals and heat silicification reaction , the question that grid resistor increase during decreasing the graph dimension of MOS cir- cuit is resolved. And by the means of silicide , resist layer and aluminium multilayer metal lines , the questions of ohmic-contact and A1 electron mobility are resolved.
出处
《半导体情报》
1998年第1期48-50,共3页
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