磁控溅射TiN薄膜的工艺及电学性能研究

Technological parameters and electrical property of TiN thin films grown processing by magnetron sputtering

采用反应直流磁控溅射法，在Si基底上制备TiN薄膜。研究了溅射沉积过程申溅射气压和Ar／N2气体流量比对TiN薄膜结构及其电学性能的影响，并对试验结果进行了分析。研究发现，在Ar／N2气体流量比为15：1时，TiN薄膜的表面均方根粗糙度和电阻率都为最小。当溅射气压增大时，薄膜厚度减小。当溅射气压为0．3～0．5Pa时，薄膜表面较光滑，电阻率较小。

Titanium nitride （TIN） thin films were prepared on Si substrates by DC reactive magnetron sputtering. The influence of deposition pressure and Ar/N2 flow rate on the technological parameters and electrical Property of TiN thin films were investigated. It is shown that when the Ar/N2 flow rate is near 15 ： 1, the RMS and resistivity are the minimum. When the deposition pressure increased, the thickness decreased. When the deposition pressure is 0. 3-0. 5Pa, the surface of TiN thin film is more smoothly and the resistivity is the minimum.