ADP晶体的生长丘、台阶微观形貌及台阶棱边能

Growth hillock,step topography and step edge energy of ADP crystals:ex situ and in situ investigation by atomic force microscopy

ADP晶体{100}面族生长的实时与非实时AFM（atomic force microscopy，AFM）研究表明，过饱和度σ处于0．005～0．04，生长温度介于293～313K之间时，晶面上观察到位错生长丘和其它晶体缺陷所形成的生长丘，晶面主要为台阶推进方式生长；位错生长丘上空洞的出现与位错弹性理论相符；随过饱和度口降低，台阶形貌会发生相应变化；生长温度为298K时，台阶棱边能不小于6．2×10^-7／cm^2。

The {100} surface topography of ADP crystal has been investigated by in-situ and ex-situ atomic force microscopy （AFM）. The results show that crystal face {100} growth is mainly from step propagation when supersaturation is within 0.005-0.04, the growth temperature is between 293-313K. Hillocks from dislocation and other crystal defects are observed. The appearance of hollow cores in the dislocation growth hillock is in accordante with dislocation elastic theory. Step morphology changes with the decreasing of the supersaturation. The step edge free energy is greater than 6.2×10^-7J/cm^2 when growth temperature is 298K.