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Ti/莫来石陶瓷界面反应的俄歇电子能谱研究 被引量:3

Auger Electron Spectroscopy Study of Ti/Mullite Interfacial Reaction
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摘要 在200℃抛光的莫来石陶瓷衬底上用电子束蒸发200nm的Ti膜,并在高真空中退火.首次利用俄歇电子能谱(AES)和X射线衍射分析(XRD),研究了从200~850℃Ti与莫来石的固相界面反应,并用热力学解释了实验结果.结果表明,在淀积过程中,最初淀积的Ti与衬底表面的氧形成Ti-O键,界面区很窄;450℃退火1h后,有少量元素态Al、Si原子析出,界面区有所展宽,但变化不大;650℃退火1h后,界面发生强烈反应,有TiO和Ti-Al、Ti-Si化合物生成.850℃退火1h后,除上述反应产物外又生成了Ti2O. A 200 nm Ti film was deposited on a polished mullite ceramic substrate at 200 ℃ by electron beam evaporation, and annealed under high vacuum condition. Auger electron spectroscopy (AES) and X ray diffraction measurement (XRD) were employed to probe the solid interfacial reaction between Ti and mullite from 200~850 ℃ for the first time, and the experimental results were also explained with thermodynamics. The results show that the first deposited Ti atoms have formed Ti-O bond with O on mullite surface during the deposition, but interfacial range is very narrow. It is broadened a little after the sample is annealed at 450 ℃ for an hour, and a little Al and Si atoms have been segregated. Interfacial reaction happens violently when the annealing temperature is 650 ℃ for an hour, TiO and Ti-Al as well as Ti-Si compound are formed. After 850 ℃ 4 hours annealing, it is found that apart from the reaction products described above, Ti 2O is formed.
出处 《西安交通大学学报》 EI CAS CSCD 北大核心 1998年第4期9-12,31,共5页 Journal of Xi'an Jiaotong University
基金 国家自然科学基金 上海交通大学金属基复合材料国家重点实验室资助项目
关键词 封装 钛膜 莫来石陶瓷 界面 俄歇电子能谱 solid solid interfaces solid phase reaction annealing elemental analysis
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