纳米晶硅薄膜中氢含量及键合模式的红外分析

Infrared analysis on hydrogen content and Si—H bonding configuration of hydrogenated nanocrystalline silicon thin films

采用传统射频等离子体化学气相沉积技术在100—350℃的衬底温度下高速沉积氢化硅薄膜.傅里叶变换红外光谱和Raman谱的研究表明,纳米晶硅薄膜中的氢含量和硅氢键合模式与薄膜的晶化特性有密切关系,当薄膜从非晶相向晶相转变时,氢的含量减少了一半以上,硅氢键合模式以SiH2为主.随着衬底温度的升高和晶化率的增加,纳米晶硅薄膜中氢的含量以及其结构因子逐渐减少.

Hydrogenated silicon films were prepared by conventional radio frequency plasma-enhanced chemical vapor phase deposition technique at a high deposition rate at temperatures from 100 to 350℃,which were studied by Fourier transform infrared spectrum and Raman scattering spectrum.The results showed that the hydrogen content and the silicon-hydrogen bonding configurations of the films were closely related to their crystallization properties.When the films changed from amorphous to nanocrystalline phase,the hydrogen content decreased by over a half,and the Si—H bonding configuration was mainly SiH2.With the increase of substrate temperature and crystallinity,the hydrogen content and the structural factor of the nanocrystalline silicon films was reduced gradually.