铜-钨复合镀层电沉积工艺及其性能

Study on electrodeposition process and properties of copper–tungsten composite coating

采用复合电沉积的方法，通过在镀铜液中加入直径为1～3μm的钨颗粒，在纯铜表面制备了铜—钨复合镀层。研究了镀液中钨质量浓度、阴极电流密度、搅拌速率、镀液温度等工艺参数对镀层中钨质量分数的影响，测定了复合镀层的显微硬度和接触电阻。得到了复合电沉积的最优工艺为：钨质量浓度35g／L，电流密度4A／dm2，搅拌强度600r／min，温度50℃。所得铜—钨复合镀层具有合适的显微硬度（98．5—112．0HV）、稳定且较低的接触电阻及较长的电接触寿命，可以取代AgCdO触头。

A copper-tungsten composite coating was electrodeposited on red copper substrate by adding tungsten particles （1-3 μm in diameter） to a copper plating bath. The effects of tungsten mass concentration in bath, cathodic current density, stirring rate and bath temperature on the microhardness of deposit were studied. The optimal process conditions were obtained as follows： tungsten mass concentration 35 g/L, current density 4 A/din2, stirring rate 600 r/min, and bath temperature 50 ℃. The copper-tungsten composite deposit has characteristics of appropriate microhardness （98.5-112.0 HV）, stable and low contact resistance, as well as long electrical contact life, being able to substitute the AgCdO contact.