Mo/Si多层膜的制备及X射线衍射表征

Preparation and X ray Diffraction Characterization of Mo/Si Multilayers

采用磁控溅射方法制备Ｍｏ／Ｓｉ多层膜．通过小角Ｘ射线散射图证明该多层膜是原子水平的，界面清晰，与设计周期基本相同．通过Ｘ射线衍射方法检测了该多层膜的组成和结构，同时对Ｍｏ／Ｓｉ多层膜的位错密度等参数进行定量研究．结果表明，该超晶格的位错密度随周期厚度的减小而增大。

Mo/Si multilayers were prepared via the method of magnetron sputtering. The interface is sharp and the multilayer is at atomic level, which are reflected from low angle X ray diffraction. These proved that the structure regularity is almost consistent with the designed period. The composition and structure of the multilayers were analyzed via X ray diffraction method. The results show that the thiner the period thickness, the higher the dislocation density of the superlattice and the finer the grain size.