Mo电极上磁控反应溅射AlN薄膜

Study of AlN Thin Films Deposited on Mo Electrode by Reactive Magnetron Sputtering

采用射频反应磁控溅射法在Mo电极上沉积了AlN薄膜。研究了溅射气压、靶基距、溅射功率、衬底温度及N2含量等不同工艺条件对AlN薄膜择优取向生长的影响。用XRD分析了薄膜的择优取向,用原子力显微镜、高分辨场发射扫描电镜表征了薄膜的形貌。实验结果表明,靶基距和溅射气压的减小,衬底温度及溅射功率的升高有利于AlN(002)晶面的择优取向生长。氮氩比对AlN薄膜择优取向生长影响较小,N2≥50%(体积分数)时均可制得高c轴择优取向的AlN薄膜。经优化工艺参数制备的AlN柱状晶薄膜适用于体声波谐振滤波器的制备。

AlN thin films were deposited on Mo electrode by RF-reactive magnetron sputtering. Effect of sputtering pressure, target-substrate distance, sputtering power, substrate temperature and N2 concentration on the orientation of AIN thin films was studied. The orientation of AlN films were characterized by X-ray diffraction （XRD）. The microstructures of films were observed by atomic force microscopy （AFM） and field-emission scanning electron microscopy （FESEM）. The results revealed that c-axis orientation of AlN thin films can be improved by the decrease of sputtering pressure, target-substrate distance and the increase of sputtering power and substrate temperature. The N2 concentration has little effect on the crystallinity of AlN films. AlN films preferred c-axis orientation when the N2 concentration exceeds 50vol%. The AFM and FESEM photographs also show that the AIN film has a smooth surface texture with uniform grain size and a highly ordered column structure which is fit for preparation of FBAR devices.