难熔金属及硅化物薄膜制备技术研究

Technology Study of Unmelting-metals and Silicide Film Preparation

本文对难熔金属及其硅化物的形成、特性进行了研究．主要对难熔金属Mo、难熔金属硅化物TiSi2、PtSi2等进行了探讨．采用溅射难熔金属、热硅化反应的手段，对解决VLSI工艺的某些问题，如：解决由于MOS电路图形尺寸缩小带来的概电阻增大的问题以及采用硅化物（如PtSi2）一阻挡层（W、MO、Ti等）一Al多层金属布线、解决欧姆接触和铝的电迁移问题起了极好的作用．

This papet studied the forms and properties of unmelting metals silicide TiSi2, PtSi2 by adopting the method of splashing unmelting metals and heating silicify reaction. It plays an active role in resolving some questions in VLSI technology such as the questions that grid resistor increase during decreasing the graph dimension of MOS circuit and the question that Ohmic -contact and electron mobility by adopting silicide(PtSi2) - resist layer (W,Mo,Ti) -aluminium, multilayer meatal lines.