低量浓度掺杂La^(3+)对KDP晶体生长质量的影响

Effect of Doping La^(3+) on Growth Qualities of KDP Crystal

在低浓度掺杂下,利用溶液降温法生长了KDP晶体和掺杂不同量浓度三价La3+的KDP晶体。通过对未掺杂KDP晶体和掺杂La3+生长的KDP晶体对比研究发现,随着La3+离子掺杂量浓度的增加,抑制了柱面的扩展,减慢了KDP晶体生长速度,但是提高了生长溶液的稳定性,同时减少了晶体中缺陷的产生。对晶体柱区进行显微硬度的测量发现,随La3+离子掺杂量浓度的增加,晶体的致密度降低;用紫外/可见分光光度计在200~800 nm波段对样品柱区做了透过率测定,发现低量浓度(La3+≤4×10-3mol/L)的La3+掺杂可以提高KDP晶体在紫外波段的透过率,改善晶体的质量。

KDP crystals were grown in pure and varying low concentration doped solutions by the temperature reduction method. By comparing the pure with La3＋ doped KDP crystals, results shows that the doped of La3＋ restrains the expansion of prismatic face, retards the growth rate of the crystal, improves the stability of the KDP growth solution, and reduces defects. Besides, the microhardness in pure KDP crystals is higher than doped crystals; The transmittance of the prismatic section of samples was measured by UV-VIS Spectrophotometer in ranges of 200~800 nm, researches found that Laa＋ with low doped concentration （La3＋≤4×10^-3mol/L） can improve the transmittance of crystals in the UV band, and improve the quality of crystals.