MOCVD GaAs太阳电池的结特性

Junction Characteristics of MOCVD and LPE GaAs Solar Cells

本文用拟合的方法求得了太阳电池的结特性参数．结果表明ＭＯＣＶＤ太阳电池的效率随电池外延ｎ型层厚度的增大而增大．暗电流随电池外延ｎ型层厚度的增大而减小．ＭＯＣＶＤ电池承受反向电流的冲击的能力随电池外延ｎ型层厚度的增大而增强．ＭＯＣＶＤ电池比ＬＰＥ电池所能承受的反向电流密度大．

Abstract The parameters of GaAs solar cells are obtained by curve fitting. The results suggest that as the thickness of the n GaAs epitaxial layer increases, the efficiency of the solar cell increases, the dark current decreases, and the ability in loading reverse current improves. MOCVD solar cells allow higher reverse current density through the pn junction than the LPE solar cells.