摘要
高纯三氟化硼是半导体离子注入用的重要掺杂离子源,在电子工业中有着广泛的应用。本文提出了在真空条件下,高温裂解氟硼酸盐、低温精馏制备高纯三氟化硼气体的新工艺。该工艺是在600℃和700℃2个温度段分别对氟硼酸盐进行高温分解,对产生的产品气体进行低温精馏操作,实现三氟化硼气体的净化。实验结果表明,该工艺流程产生的三氟化硼气体纯度不低于99.995%,四氟化硅的含量在10 ppm以下。
The extremely pure boron trifluoride is the important doping ion source for semiconductor ion implantation,and it has a wide application in electronics industry.In vacuum conditions,the new process preparation of extremely pure boron trifluoride gas by pyrolysis of fluoroborate at elevated temperature and cryogenic distillation was proposed in the paper.Fluoroborate was respectively thermal decomposed at the temperature of 600 ℃ and 700 ℃,and the product of gas was cryogenic distilled,and the gas of boron trifluoride was to realize purification.The experiments showed that the purity of boron trifluoride gas not less than 99.995%,and the content of four fluorinated silicon below 10 ppm in the process of preparation.
出处
《舰船科学技术》
2010年第5期99-102,共4页
Ship Science and Technology
关键词
三氟化硼
制备
高纯
boron trifluoride
preparation
extremely pure