摘要
砷化镓光导开关具有响应速度快、转换率较高等特点,为它应用于研究高速器件的性能等方面提供了可能。通过阐述该领域理论和实验的主要研究结果,分析比较国内外的研究现状,为以后的研究工作打下基础。
The GaAs photoconductive semiconductor switch（GaAs PCSS）plays an important role in measurement of the ultra high-speed signal,which has unique properties compared with traditional switches,such as high response speed and large transmission efficiency.These functions provide the possibilities for studying the performances of electronic and molecule devices with ultra speed.The major findings of theoretical and experimental study at present are described,analysed and compared to provide fundamental base for the future research.
出处
《激光与光电子学进展》
CSCD
北大核心
2010年第6期37-42,共6页
Laser & Optoelectronics Progress
基金
国家自然科学基金(60772064)
北京市教委科技项目(KM200810028007)资助课题
关键词
半导体
光导开关
砷化镓
时间分辨力
semiconductor
photoconductive semiconductor switch
GaAs
time resolution
