温度对BCl_3-CH_4-H_2化学气相沉积掺硼碳沉积过程的影响(英文)

Effect of Temperature on Deposition Process of Boron Doped Carbon from BCl_3-CH_4-H_2 by Chemical Vapor Deposition

以三氯化硼、甲烷和氢气的混合气体为前驱体,利用磁悬浮天平热重系统研究了850～1200℃区间内化学气相沉积掺硼碳的原位动力学。探索了温度对沉积速率的影响,计算了该温度区间内沉积过程的表观活化能,同时借助SEM和EDS技术,测试了不同温度点(900℃、1000℃、1100℃和1200℃)沉积产物的微观结构和成分。结果表明,化学气相沉积掺硼碳属于典型的热激活反应过程;在所研究的温度区间内存在5种不同的反应控制机制;随着温度的升高,沉积产物的n(B)/n(C)和堆积密度都显著变小,说明高n(B)/n(C)和高致密度的掺硼碳涂层应在较低的温度下制备。

Overall kinetics of the growth of boron doped carbon film deposited by chemical vapor deposition （CVD） from the mixture of boron trichloride （BCl3）, methane （CH4） and hydrogen （H2） are determined by a magnetic suspension microbalance. Effect of temperature （850-1200℃） on deposition rates is measured, apparent active energy is calculated, meanwhile, the morphology and composition of films at 900℃, 1000℃, 1100℃, 1200℃ are observed and analyzed using scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS） respectively. The results show that the deposition of boron doped carbon from BCl3-CH4-H2 by CVD is a typical thermal activation process. Five regions are distinguishable in studied temperature range corresponding to five different reaction control regimes according to the significant imparity among the apparent active energies calculated. The compact density and B/C molar ratio of deposits decrease obviously with temperature increasing, indicating high density and high B/C molar ratio films can be obtained at relatively low temperature.