摘要
漏栅寄生电容是ＩＧＢＴ管的一个重要参数，能引起意外的栅源电压尖峰，击穿栅源间的硅氧化膜，导致器件永久失效。对此种影响的过程进行了分析。
The body drain-gate capacitor of IGBT is an important
factor which can make unexpected overvoltage between gate and source.Due to it,the silicon oxide
of gate-source is destroyed,and the IGBT is failure.The paper analysises this kind of influence and
gives the method.
出处
《电焊机》
1999年第7期1-3,共3页
Electric Welding Machine
