绝缘栅双极晶体管(IGBT)的实时仿真研究

Study on Real-time Simulation of the Insulated-gate Bipolar Transistor(IGBT)

在电力电子装置的仿真研究中,大功率高速开关器件,如IGBT、IGCT等,因开关速度快且电磁特性复杂,多被当作理想器件处理。尽管理想化后,其作为开关器件的功能并未丧失,但在高频电路中,器件的开关损耗已不容忽视,这种理想的处理方式忽略了器件开通和关断本身的电磁响应,必然导致仿真的可信度降低。分析了IGBT实时仿真的必要性和难点,并针对IGBT的仿真模型提出以单周期时延法为基础的三条仿真策略,有效地解决了器件实时仿真中的技术难题。

In the simulation of power electronic devices,the high-power switching devices,such as IGBT and IGCT,have been treated as an ideal switching device due to its fast switching characteristics and complex electromagnetic characteristics.Although the ideal model has the best switching characteristics,the switching losses of the real device working in high-frequency can not be ignored.This ideal approach ignores the electromagnetic response of device in its switching process,which do not conform to the actualities,and result in reduced credibility of the simulation.This paper discussed the necessity and difficulty of real-time simulation on IGBT,and three relevant methods on the base of single-cycle-delay have been proposed according to a simulation model the experiments have shown that real-time simulation of the device can be quickly achieved and accurately by the methods proposed in this paper.