新型缺陷地结构改善射频功率放大器的性能

New Defected Ground Structure to Improve the Performance of the RF Power Amplifier

提出了一种新型的缺陷地结构,并将这种新型的缺陷地结构应用于实际所设计的射频功率放大器中。这种新型的缺陷地结构,蚀刻在射频功率放大器的偏置线下面的地平面和输出匹配电路后方的地平面,经过最后和不加这种结构的射频功率放大器进行比较和测试验证,证明成功的抑制了射频功率放大器的二次、三次谐波。

This paper presented a novel DGS structure and applyied it to the actual design of RF power amplifiers.The novel DGS structure etched on the ground that under the drain bias line and behind the output matching circuit of RF power amplifier.After the comparison with RF power amplifier without the novel DGS structure and measurement,Proved the second and third harmonics of RF power amplifier are successfully suppressed.