氢化硅薄膜光吸收近似特性研究

Photo-absorption coefficient approximation of hydrogenated silicon films

利用等离子体化学气相沉积系统在直流电压源和射频源的双重激励下,以康宁7059玻璃为衬底制备了氢化硅薄膜.通过测定氢化硅薄膜Raman光谱,对薄膜微结构进行了表征;建立氢化硅薄膜的光吸收模型,计算出薄膜的光吸收系数和光学带隙,和实验结果基本一致,说明该模型符合实验结果;并利用该模型计算的光吸收系数和光学带隙,结合AMPS软件对设计的太阳电池结构进行了模拟,给出的I-V特性曲线变化趋势与实验结果基本符合,同时对实验结果与模拟结果存在差异的原因进行了分析,并给出合理解释.

Hydrogenated silicon films are prepared on Corning 7059 glass by the plasma enhanced chemical vapour deposition technique with radio frequency （RF）,power,（13.56 MHz） and DC bias.The microstructures of hydrogenated silicon films investigated by Raman spectra.The photo-absorption coefficient is calculated by utilizing an established photoabsorption model.The I-V characteristics of hydrogenated silicon film solar cells are simulated by using software AMPS.The results show that photo-absorption coefficient curves and I-V curves are both consistent well with experimental data.At the same time,the difference between experimental results are calculated results were analyzed.