650nm波长发光器件的电学特性研究

Electrical characteristics of 650nm wavelength diodes

利用正向交流小信号结合直流I—U特性的方法对波长为650nm的发光二极管(LED)和激光二极管(LD)的正向电学特性进行精确表征.电学测量结果表明:发光二极管和激光二极管的串联电阻并非常数,激光二极管的串联电阻、结电压、电导和电容在阈值附近均出现明显突变.对比激光二极管和发光二极管的电学特性,得到激光二极管阈值处电学特性的突变是激射发光的必然结果.

Accurate forward electrical characteristics of 650nm wavelength LDs and LEDs have been measured using ac admittance measurements together with dc plot.Experiment shows that the series resistances of LDs and LEDs are not constants;furthermore,the sudden changes of the electrical parameters of LDs including series resistances,junction voltage,apparent conductor and capacitance are also observed.The difference of the electrical parameters between LEDs and LDs could prove that the sudden change of the electrical characteristics at lasing threshold of LDs is a necessary result caused by lasing.