摘要
利用电学法测量器件的温升、热阻及进行瞬态热响应分析是器件热特性分析的有力工具．本文利用电学法测量了ＧａＡｓＭＥＳＦＥＴ在等功率下，加热响应曲线随电压的变化，并通过红外热像仪测量其温度分布，结果表明电学法测得的平均温度与温度分布有很大关系．理论计算也表明了这一点．在等功率条件下，电学平均温度随着温度分布趋于均匀而减少．该方法可用来判断器件的热不均匀性．
Abstract The electrical method (EM) has become an important means for measuring the
temperature rise, the thermal resistance and especially the transient thermal response of
semiconductor devices. In this paper EM is used to measure the transient heating response of
GaAs MESFET at different ratio of voltage to current under constant power. The temperature
distribution in the device is measured by infrared thermograph. Both of experimental and
calculated results show that the average temperture T avg by EM is strongly dependent
on temperature distribution in device. This feature could be used to judge the thermal
inhomogeneities in device.
基金
北京市科技新星培养计划
关键词
半导体器件
热特性
电学法
测量
Electric variables measurement
MESFET devices
Temperature distribution
