石墨烯的化学气相沉积法制备

Preparation of graphene by chemical vapor deposition

化学气相沉积(CVD)法是近年来发展起来的制备石墨烯的新方法,具有产物质量高、生长面积大等优点,逐渐成为制备高质量石墨烯的主要方法。通过简要分析石墨烯的几种主要制备方法(胶带剥离法、化学剥离法、SiC外延生长法和CVD方法)的原理和特点,重点从结构控制、质量提高以及大面积生长等方面评述了CVD法制备石墨烯及其转移技术的研究进展,并展望了未来CVD法制备石墨烯的可能发展方向,如大面积单晶石墨烯、石墨烯带和石墨烯宏观体的制备与无损转移等。

Chemical vapor deposition（CVD）is an effective way for the preparation of graphene with large area and high quality.In this review,the mechanism and characteristics of the four main preparation methods of graphene are briefly introduced,including micromechanical cleavage,chemical exfoliation,SiC epitaxial growth and CVD.The recent advances in the CVD growth of graphene and the related transfer techniques in terms of structure control,quality improvement and large area graphene synthesis were discussed.Other possible methods for the CVD growth of graphene were analyzed including the synthesis and nondestructive transfer of large area single crystalline graphene,graphene nanoribbons and graphene macrostructures.