摘要
研究直流电弧等离子体喷射化学气相沉积金刚石膜系统中，基片温度对金刚石膜生长速率和质量的影响．实验发现，金刚石膜的生长速率和结晶性随基片温度的增加而单调增加，但是金刚石膜中非金刚石碳的质量分数先是随基片温度的增加而降低，在1000～1100℃达到最低值以后又开始随基片温度的增加而增加．
The effects of substrate temperature on the growth rate and quality of diamond films by DC arcplasma jet method were studied. It was found that the growth rate and crystallinity of diamond films increasedmonotonically with the increase of substrate temperature. However, when the substrate temperature increased from 800℃ to 1200℃, the content of non-diamond carbon co-deposited in the diamond films decreased first,and then increased rapidly after reaching a minimum at 1000~1 100℃.
出处
《北京科技大学学报》
EI
CAS
CSCD
北大核心
1999年第4期353-356,共4页
Journal of University of Science and Technology Beijing
基金
国家"863"高科技项目!863-715-Z38-03
