摘要
以薄膜混合集成电路为基础,采用AL2O3精细陶瓷做衬底和国际上较先进的共晶工艺,运用宽带内补偿网络和负反馈并用的设计方法,结合理论计算和仿真技术,实现了高指标C波段宽带低噪声放大器的设计,测试结果验证了设计的正确性,为高性能宽带低噪声放大器研制提供了新的设计依据和理论基础。
Based on the thin film hybrid integrated circuits,Al2O3fine ceramic is taken as substrates,the international advanced eutectic process is adopted,and the design method utilizing broadband internal compensation networks and negative feedback is used.Thereby,a high C-band Broadband Low Noise Amplifier which meets the index requirements is achieved in combination with theoretical calculations and simulation technology.The test results verify the correctness of the design.It provides a new basis and theoretical basis for the development of high performance broadband low-noise amplifier design.
出处
《现代电子技术》
2011年第11期100-103,共4页
Modern Electronics Technique
关键词
宽带
低噪声
放大器
薄膜混合集成电路
共晶工艺
broadband
low nosie
amplifier
film hybrid integrated circuit
eutectic process