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a-Ge/Au双层膜分形过程的计算机模拟 被引量:2

COMPUTER SIMULATION OF FRACTAL BEHAVIORS IN a-Ge/Au BILAYER THIN FILMS
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摘要 从实验观察结果出发,提出与传统扩散控制聚集(DLA)模型不同的分形生长模型,用Monte-Carlo方法模拟了具有不同界面结构的a-Ge/Au双层膜在晶化过程的分形行为,得到了和实验结果相符合的分形结构。结果表明:在a-Ge/Au双层膜的退火过程中,由非晶晶化潜热形成的局域温度场在分形过程中起主要作用;密集分枝结构的出现是由粒子扩散的局域性引起的;模拟结果还表明DLA形态的分形结构也可以在粒子扩散距离相对短的条件下获得。 Based on the experimental observation, two models were proposed to described the fractal formation in a-Ge/Au films with different interfacial structures. Computer simulations were done according to the above models, the results are in agreement with experimental observations. The results also show that the local latent temperature fields play a dominant role in the fractal formation process, and the appearance of dense branching morphology is due to the local diffusion effect.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 1990年第8期1183-1188,共6页 Acta Physica Sinica
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  • 1侯建国,物理学报,1988年,37卷,1735页
  • 2郑兆勃,非晶固态理论,1987年

同被引文献6

  • 1吴自勤,张人佶.非晶态半导体/金属薄膜的分形晶化[J].物理学进展,1994,14(4):435-452. 被引量:3
  • 2T.A. Witten and L. M. Sander. Diffusion-limited aggregation, a kinetic critical phenomenon[J]. Phys. Rev. Lett, 1981,47 (19):1400.
  • 3Wang Dai-mu,Wu Zi-qin. Random successive nucleation model for simulating multiple fractal formation in a-Ge/Au bilayer films [J]J. Appl. Phys,1992,71 (12) :5904.
  • 4Wang Dei-mu,Wu Zi-qin. Simulation of multiple fractal and compact growth of ultra thin films on hexagonal substrate[J]Chin.Phys, 2000,9(5) :368.
  • 5Wang Dei-mu,Wu Zi-qin. multiple cluster growth of ultra-thin film with anisotropic edge diffusion[J]Chin. Phys,2001,10(1):46.
  • 6Li Hua et al. multifractal analysis of the spatial distrbution of secondary-electron emission sites[J]Phys. Rev. B53. 1996,53(24):16631.

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