入射能量对H2^＋与SiC表面相互作用影响的分子动力学模拟

Molecular Dynamics Simulation of incident energy effects of H_2^+ interactions with SiC surface

用分子动力学方法研究了入射能量对H2+与SiC样品表面相互作用的影响。模拟结果表明,在H2+轰击SiC样品表面的初始阶段,样品中H原子的滞留量增加较快,其后,增加的速率减慢,并逐渐趋于饱和。入射能量越大,样品中H原子的滞留量也就越大。样品在H2+的轰击下,样品Si、C原子会发生刻蚀。入射能量越大,Si和C原子的刻蚀量越大。在相同入射能量下,Si原子的刻蚀量大于C原子。生成的产物中,以H,H2和SiH4为主;产物H2的量随着能量的增加而减小。其他产物随着入射能量的增加而增加。

Molecular dynamic simulations were performed to study H2＋ ions bombarding SiC with incident energies of 1, 5, 10 and 15eM The simulated results show that the retention of H atoms on the surface increases with increasing energy. During the initial stage, the amount of retention H atoms sharply increases and then the retention of H atoms reaches saturation. Si and C atoms are removed from the surface with energies of 10 and 15eV. The number of removed Si atoms is larger than that of C atoms. For the products, H, H2 and SiH4 are dominant. And with increasing incident energies, the number of Ha species decreases and the other species increase.