GaN基光导型X射线探测器的光淬灭研究

Optical Quenching of X-ray Photoconductor Based on GaN

利用先进的半导体微加工技术制备了GaN基光导型X射线探测器,观察到其在荧光灯照射下对X射线的光电流响应有明显降低的光淬灭现象,以及在荧光灯关闭和开启瞬间电流值的突变现象,设计了各种不同情形下的光电流响应实验对这一光淬灭以及电流值突变现象进行了分析和研究,光淬灭主要是由于空穴陷阱和复合中心作用产生,而在荧光灯关闭和开启的瞬间,电流值的突变是由于荧光中某种波长的紫外光激发价带中的电子跃迁至导带中所致。

X-ray photoconductor based on GaN have been made by using advanced semiconductor microfabrication technology.Optical quenching phenomenon of GaN x-ray detector was presented.The photocurrent had a mutation when the fluorescent light was turned on and off.Experiments have been carried out to analyze the optical quenching and current mutation phenomenons.The results have indicated that optical quenching effect associates with a hole trap and recombination centers,while the current mutation results from a UV light which excited the electron from valence band to conduction band.