摘要
通过对金属铝、多孔硅及单晶硅样品在无光照和有光照两种不同条件下I-U特性的测试,研究了多孔硅光电特性及其应用.结果表明,多孔硅(PS)
The I-U curve of Al/PS/Si structure under different conditions are studied, the results show that porous silicon has very high resistive and very sensitive optics features; based on the characteristics, the photo switch will be designed.
出处
《陕西师范大学学报（自然科学版）》
CAS
CSCD
北大核心
1999年第4期54-56,共3页
Journal of Shaanxi Normal University：Natural Science Edition
