波状p基区IEC-GCT制造工艺研究

Research on the Manufacturing Technology of Corrugated p-base IEC-GCT

波状基区结构是一种电力半导体器件的最新高功率制造技术,在p基区中引入该结构可以改善IEC-GCT的RBSOA特性与门极开关均匀性。提出该器件的工艺制造方案,数值模拟结果表明建议方案可行,所得器件结构参数符合目标要求。模拟并分析了门极挖槽工艺对波状基区形状的影响及铝杂质扩散对阳极结构的影响,挖槽工艺顺序和挖槽深度对阴极掩蔽效果有显著影响,而建议方案可避免A l杂质在阳极扩散导致的连通现象。

Corrugated base structure,one of the novel high power technologies for power semiconductor devices,introduced into p-base region of an IEC-GCT,can improve RBSOA characteristic and switching uniformity in gate region.The manufacture process scheme of this novel device was investigated and presented.The results from numeric simulation prove the proposed flow to be feasible and the device parameters to be up to target demand.The influences of gate-trench process on corrugated base size and Al-diffusion on anode structure were simulated and analyzed.It shows that gate-trench sequence or trench depth can control the corrugated base shape,and the presented scheme can avoid inter-connected anode.