摘要
AlN薄膜在力学、光学和电子学中有着广泛的应用,而反应磁控溅射技术由于沉积温度低,成本低,非常适合沉积应用于GHz通信系统中体声波(BAW)和表面声波(SAW)器件的(002)取向的AlN薄膜。本文先概述了反应溅射的两个模型,然后综述了工艺参数包括溅射气压、溅射功率、氮气浓度、衬底温度、衬底种类、靶基距、薄膜厚度、衬底偏压、退火处理等对AlN薄膜生长和性能的影响。
Aluminum nitride film is a promising advanced ceramic material with a wide range of application in mechanics, optics and electronics. （002） oriented aluminum nitride film prepared by reactive magnetron sputtering has been successfully used in bulk acoustic wave and surface acoustic wave devices for GHz＇band wireless .communication systems. In this paper, two latest reactive sputtering models are Briefly introduced and then the effects of the most critical deposition parameters on the growth and performance of aluminum nitride films are reviewed.
出处
《真空》
CAS
北大核心
2011年第6期1-9,共9页
Vacuum
基金
国家自然科学基金重点项目资助(60936002)
