部分耗尽SOI ESD保护电路的研究

Investigation on ESD Robustness in Partially-Depleted SOI Technology

为了解决SOI技术的ESD问题,我们设计了一种适用于部分耗尽SOI的栅控二极管结构的ESD保护电路,并进行了ESD实验。通过实验研究了SOI顶层硅膜厚度、栅控二极管的沟道长度和沟道宽度,限流电阻以及电火花隙等因素对保护电路抗ESD性能的影响,我们发现综合考虑这些因素,就能够在SOI技术上获得良好的抗ESD性能。

In order to solve ESD（Electrostatic Discharge）problem of SOI technology,We design a gated diode for electrostatic discharge protection circuit in partially-depleted silicon-on-insulator（SOI）,and carry out ESD experiment.Based on the ESD experimental results,we analyze some factors of protection circuits such as SOI silicon thickness on BOX,channel width and channel length of gated diode,current limiting resistance and spark gap in the effects on the ESD capability.We have discovered that if these factors are synthetically considered,sufficient ESD protection levels can be achieved in SOI technology.