基于PMOS三维选通高速门控技术

3D Range-Gated High Speed Gate-Control Technology Based on PMOS

为三维选通成像提供了纳秒级阴极选通高速门控开关的设计与实现。该门控开关创新性地采用互补级联开关的方式实现阴极正负电压的高速选通。结合功率开关管的特性,使用功率PMOS作为前级开关,产生平顶质量好的正脉冲;采用功率三极管作为后级开关,无需额外驱动,通过二者互补级联的方式产生阴极选通负脉冲。实验表明,最终开关的上升沿时间为13.4 ns,下降沿时间为24.6 ns,最小脉宽为50 ns,最高工作频率100 kHz,导通电压-200 V,关断电压40 V,满足三维选通门控要求。门控开关通过互补级联方式,不但寄生参数小,脉冲上升、下降时间小,脉冲平顶质量好,时序控制精度高,无需隔离驱动,而且通过功率三极管作后级开关,可以获得比TTL触发脉冲更窄的脉宽,具有良好的脉宽特性。

Design and implementation of nanosecond high speed gate-control switch was required for 3D range-gated imaging. Complementary cascade was used to implement the high speed switch with negative and positive voltage. Power PMOS and power triode transistor were used according to the switch prosperities. Power PMOS was the front switch which produced a positive pulse with good flat-roofed quality, and power triode transistor was the rear one which didnt require extra driver. Through the complementary cascade of the two switches, cathode negative pulse was obtained. Experiments showed that the rising time and the falling time of the gate-control switch were 13.4 ns and 24.6 ns respectively. The narrowest pulse width was 50 ns and the highest frequency was as high as 100 kHz. The turn-on voltage of the switch was -200 V and the turn-off voltage was 40 V. All of these met the requirements of 3D range-gated imaging. Through complementary cascade switch, the rising and falling is obtained. In addition, the switch has many precision and none of isolated driver, which can time of the pulse are small, and good flat-roofed quality advantages such as simple structure, high timing control obtain narrower pulse width than TTL trigger signal.