摘要
介绍了以光电应用为背景的大尺寸ZnTe单晶生长技术的研究进展,综述了大尺寸ZnTe单晶不同生长技术的特点及其对单晶性能的影响,重点分析了为解决ZnTe生长过程中存在的蒸汽压过高的问题,通过控制提高Te的比例,实现低温低压生长,对比了不同生长方法的生长机理差异及其对单晶尺寸、缺陷和性能的影响,为寻求解决大尺寸单晶生长面临的问题提供了参考。
Ⅱ-Ⅵcompound semiconductor materials with excellent optical, electrical and other functions, have great potential applications in the LED, solar and other areas. As the focus of optical materials recently, there are many difficulties to grow large-size single crystal stability. The current status of growth of large-diameter ZnTe single crystals were discussed. Much emphasis was focused on different single-crystal growth mechanism, and their effects on size, defects and performance, so as to seek solutions to grow large-size crystal.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2012年第13期46-49,共4页
Materials Reports
基金
上海市自然科学基金(10ZR1429700)
上海市教委创新项目(10YZ181)
上海市重点学科建设资助项目(J51504)
