硅衬底上BSCCO高温超导材料的制备

Preparing of BSCCO /Si High-Tc Superconductor Films

研究了采用单靶磁控溅射在Si（100）衬底上生长YSZ（钇稳定的ZrO2）和BSCCO（铋锶钙铜氧）薄膜的工艺条件，包括生长温度、生长气氛，生长速率及氧化退火等。还研究了高温超导相的形成与生长温度的关系，并获得了超导膜临界温度为82K的BSCCO／YSZ／Si兼容材料。

The process parameters of preparing YSZ and BSCCO superconducting films on Si (100) by single target rf magnetron sputtering,such as temperature, sputtering atmosphere, deposition rate and the conditions of annealing are studied. The dependence of high Tc phases on growing temperatures is emphatically studied. The critical temperature of BSCCO/YSZ/ Si film is 82K.