磷化铟单晶片三步抛光技术研究

Research on the Three-Step Polishing Technology of InP Wafers

在磷化铟单晶片的抛光工艺中,将整个抛光过程分为粗抛、中抛以及精抛三个阶段,分别实现对磷化铟抛光片的总厚度变化、局部厚度变化以及表面粗糙度的控制。在粗抛阶段,采取压纹结构的抛光布、硅胶直径大的抛光液、有效氯含量高的氧化剂等措施,使化学作用、机械作用在较高的作用模式下达到平衡,使磷化铟单晶片表面快速达到镜面水平。在中抛阶段,采取平面结构抛光布、硅胶直径较小的抛光液、过氧化氢为氧化剂等措施,使化学作用、机械作用在较低的作用模式下达到平衡,实现对磷化铟单晶片局部平整度的控制。在精抛阶段,采取绒毛结构抛光布、硅胶直径更小的抛光液、过氧化氢为氧化剂等措施,实现对磷化铟单晶片表面粗糙度的控制。

In the polishing technology of InP wafers,the polishing procedure was divided into the rough polishing step,the medium polishing step and the fine polishing step.In the three-step polishing process,the parameters such as the total thickness variation（TTV）,local thickness variation（LTV） and surface roughness were controlled in different steps.In the rough polishing step,the chemical action and mechanical action reach equilibrium in the higher action mode,and the surface quality of InP wafers quickly reached the mirror level through using the embedded pad,big size silica slurry and oxide with the high chlorine concentration.In the medium polishing step,the chemical action and mechanical action reach equilibrium in the lower action mode,and the LTV of InP wafers was controlled through using the flat pad,medium size silica slurry and peroxide solution.In the fine polishing step,the surface roughness of InP wafers was controlled through using the flannelette pad,small size silica slurry and peroxide solution.