高功率InGaAs/GaAsP应变量子阱垂直腔面发射激光器列阵

High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array

为提高垂直腔面发射激光器(VCSEL)的输出功率,对具有3个In0.2Ga0.8As/GaAs0.92P0.08应变量子阱结构,发射波长为977nm的VCSEL列阵进行了研究。对量子阱结构进行了优化,选择具有更宽带隙的GaAsP作为势垒材料,计算了In0.2Ga0.8As/GaAs0.92P0.08量子阱的带阶。对采用In0.2Ga0.8As/GaAs0.92P0.08和In0.2Ga0.8As/GaAs两种量子阱结构的器件的输出功率进行了理论模拟和比较分析。分别测试了上述两个列阵器件的脉冲峰值功率并利用由开启电压、阈值电流和串联电阻决定的p参数评估了列阵器件的输出性能。实验结果表明,当注入电流为110A时,发光面积为0.005cm2的In0.2Ga0.8As/GaAs0.92P0.084×4VCSEL列阵获得了123 W的脉冲峰值功率,比具有相同发光面积的In0.2Ga0.8As/GaAs列阵器件的脉冲峰值功率大13%,前者相应的功率密度和斜率效率分别为45.42kW/cm2和1.11W/A。连续和脉冲工作下的p值分别为15和13,表明器件在两种工作条件下都具有相对较好的输出性能。得到的结果证明,包含3个In0.2Ga0.8As/GaAs0.92P0.08应变量子阱的4×4VCSEL列阵器件能够获得较高的功率输出。

Abstract： To improve the output powers of Vertical Cavity Surface Emitting Lasers （VCSELs）, a 977 nm VCSEL array with three Ino. 2 Ga0.8 As/GaAs0. 92 P0. 08 strained Quantum Wells（QWs） was studied. The structures of the QWs were optimized and GaAsP with a larger band gap was chosen as the barrier material, and the band offsets of In0. 2 Ga0. 8 As/GaAs0. 92 P0.08 were calculated. The output powers of the devices which used In0. 2 Ga0.8 As/GaAs0. 92 P0.08 and In0. 2 Ga0. 8 As/GaAs QWs were simulated theoretically and analyzed comparetively, respectively and the pulsed peak powers of two array devices were measured. Then, the performance of the array device was estimated by a functional method using a p-parameter determined by the turn-on voltage, threshold current, and the differential resistance. Experimental results show that the 4 × 4 VCSEL array with In0.2Ga0.8As/GaAs0.92P0.08 QWs and an emitting area of 0. 005 cm2 can achieve a pulsed peak power of 123 W when the injecting current is 110 A, and its power density and slope efficiency are 45.42 kW/cm2 and 1.11 W/A,respectively. This output power is 13% larger than that of the array with In0.2Ga0.8 As/GaAs QWs and the same emitting area. Furthermore, the values of p parameter are 15 and 13 under CW operation and pulsed operation, respectively, which indicates that the device has relatively good performance. In conclusion, the 4 × 4 VCSEL array with three In0. 2 Ga0.8 As/GaAs0.92P0.08 strained QWs is able to achieve higher output powers.