InSb红外探测器芯片金丝引线键合工艺研究

InSb infrared detector chip gold wire bonding process study

InSb红外探测器芯片镀金焊盘与外部管脚的引线键合质量直接决定着光电信号输出的可靠性,对于引线键合质量来说,超声功率、键合压力、键合时间是最主要的工艺参数。从实际应用出发,采用K&S公司4124金丝球焊机实现芯片镀金焊盘与外部管脚的引线键合,主要研究芯片镀金焊盘第一焊点键合工艺参数对引线键合强度及键合区域的影响,通过分析键合失效方式,结合焊点的表面形貌,给出了适合InSb芯片引线键合质量要求的最优工艺方案,为实现InSb芯片引线键合可靠性的提高打下了坚实的基础。

The wire bonding quality of InSb infrared detector chip surface solder joint and external pin solder directly determines the reliability of the optical signal output. Ultrasonic power, bonding time and bonding force are the most important process parameters for the wire bonding quality. Based on the practical application, gold wire bonding was performed on a K＆S 4124 wire bonder with the gold plated pads, and the effects of these process parameters on bond shear force and the bonding region were studied. By analyzing the failure mode of bonding and the solder joints morphology, the optimum process parameters meeting InSb chip gold wire bonding quality requirements were obtained. This study has laid a solid foundation for the InSb chip wire bonding reliability.