期刊文献+

反应烧结制备轻质高强Si_3N_4/SiC材料 被引量:1

The Preparation of Light Quality and High Strength Si_3N_4/SiC Materials by Reaction Sintering
下载PDF
导出
摘要 采用反应烧结制备轻质高强Si3N4/SiC材料。分析了烧成制度对氮化合成Si3N4结合相的影响,研究了Si3N4结合相、SiC骨料粒径大小以及级配对试样性能的影响。通过X射线衍射仪、扫描电子显微镜、Archimedes排水法以及万能试验机分别表征材料的物相组成、微观结构、体积密度和力学性能。实验结果表明:坯料中添加大粒径SiC(D50=150μm)会增加试样的体积密度,降低试样的抗弯强度;试样中加入大粒径SiC会减少氮化增重,阻碍氮化反应;试样分别在1350℃/1450℃保温2h,生成α-SiN和β-Si3N4的量基本相等,性能最佳,抗弯强度达到125MPa,(弯曲)比强度达到5.4×104N·m/kg。 Light quality and high strength Si3N4/SiC materials were fabricated by reaction sintedng. The effect of the firing system on Si3N4 phase was analyzed, and the effect of Si3N4 phase and the SiC aggregate size and gradation on the properties of samples were researched. The composition of phase and the microstructure of samples were characterized respectively by X-ray diffraction (XRD) and scanning electron microscopy (SEM), and the bulk density and mechanical properties were characterized respectively by Archimedes method and universal test machine. The experimental results show that the bulk density of the samples were increased and the bending strength of the samples were reduced by the adding of the large size SiC(D50=150μm). The increasing weight of samples were reduced and the nitride reactions were blocked when the large size SiC added to the samples. When the sample sintered in 1350℃/1450℃ and preserved 2h respectively, the amount of α-Si3N4 and β-Si3N4 were basic equal, and the bending strength of the sample is 125 MPa and the (bending)specific strength of the sample is 5.4 × 10^4 N· m/kg.
出处 《陶瓷学报》 CAS 北大核心 2012年第4期451-456,共6页 Journal of Ceramics
关键词 氮化硅 碳化硅 反应烧结 轻质 高强度 silicon nitride silicon carbide reaction sintering light quality high strength
  • 引文网络
  • 相关文献

参考文献16

  • 1Luo Fa,Zhu Dongmei. Properties of reaction-bonded SiC/Si3N4 ceramics[J].Materials Science and Engineering A,2006,(1-2):285-289.
  • 2J.Mukerji,J.Rakshit. Properties of reaction bonded silicon nitride obtained from slip cast performs[J].Bulletin of Materials Science,1990,(04):259-270.
  • 3周曦亚,凡波,郑睿.反应烧结形成氮化硅/碳化硅材料[J].中国陶瓷工业,2004,11(2):40-42. 被引量:7
  • 4Coble R L,Kingery W D. Effect of porosity on physical properties of sintered alumina[J].Journal of the American Ceramic Society,1956,(11):377-385.
  • 5Spriggs R M. Expression for effect of porosity on elastic modulus of polycrystalline refractory materials,particularly aluminum oxide[J].Journal of the American Ceramic Society,1961,(12):628-629.
  • 6李翔,徐永东,张立同,成来飞,张显.颗粒尺寸分布对SiC-Si粉体体系密度的影响[J].耐火材料,2001,35(4):193-195. 被引量:7
  • 7ToshiharuKinoshita. Kakamigahara.SIC REFRACTORY COMPRISING SILICON NITRIDE BOND THERETO AND METHOD FOR PRODUCTION THERE[P].United States,7,494,949,2009.
  • 8黄祥卉,钱端芬,伍协.影响Si_3N_4结合SiC制品烧结的各因素及机制[J].中国陶瓷工业,2002,9(3):23-26. 被引量:4
  • 9Du H,Tressler R E,E1Spear K. Thermodynamics of the Si-N-O System and Kinetic Modeling of Oxidation of Si3N4[J].Journal of the Electrochemical Society,1989.3210-3215.
  • 10关振铎.无机材料物理性能[D]北京:清华大学出版社,199242-46.

二级参考文献40

共引文献45

同被引文献5

引证文献1

二级引证文献5

;
使用帮助 返回顶部