用ΔV_(be)法对双极晶体管结温不均匀性的测量

Measurement of Junction Temperature Inhomogeneity of Bipolar Transistors by ΔV_(be) Method *

考虑到结温分布不均匀的情况 ,对用 ΔVbe法测量双极型晶体管的结温进行了研究 .当结温分布均匀时 ,测得的结温与测试电流无关 ;当结温分布不均匀时 ,小测试电流测得的结温高 ,大测试电流测得的结温低 ,测得结温随测试电流的变化范围随结温分布不均匀度的增加而增大 .这一现象可用来判别双极晶体管结温分布的不均匀性 .

For a uniform junction temperature, the measured junction temperature by Δ V be method is inderendent of the test current, while for an inhomogeneous one, the measured temperature decreases with the test current increasing. The range measured junction temperature increases with the increase of the junction temperature inhomogeneity. This phenomenon can be used to estimate the junction temperature inhomogeneity of bipolar transistors without any damage on the package.