期刊文献+

Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7/Ba_(0.5)Sr_(0.5)TiO_3复合薄膜介电性能的频率特性研究

Investigation of frequency dependent dielectric properties of Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7/Ba_(0.5)Sr_(0.5)TiO_33 thin films
原文传递
导出
摘要 采用射频磁控溅射法在蓝宝石基片上制备了Bi1.5Zn1.0Nb1.5O7(BZN)/Ba0.5Sr0.5TiO3(BST)双层复合薄膜,并研究了该薄膜在100 kHz^6 GHz频率范围内的介电性能。研究结果表明,BZN/BST复合薄膜的介电性能具有良好的频率稳定性。该复合薄膜的介电常数在研究的频率范围内基本与频率无关;其介电损耗在频率低于1 GHz时与频率无关,在频率高于1 GHz时随频率的上升而略微增大;薄膜在研究的频率范围内具有稳定的介电调谐率。 Bi1.5 Zn1.0 Nb1.5 O7 (BZN)/Ba0.5 Sr0.5 TiO3 (BST) bilayered thin films were prepared on sapphire substrates by conducting a radio frequency magnetron sputtering, and the dielectric properties of these prepared films were investigated in the frequency range between 100 kHz and 6 GHz. The results indicate that the dielectric properties of BZN/BST bilayered thin films possess good frequency stability. The permittivity of these films is almost frequency independence. The dielectric loss of these films is frequency independence at the frequencies below 1 GHz, and it slightly increases as the frequency increases at the frequencies above I GHz. The dielectric tunability of these films is frequency independence.
出处 《电子元件与材料》 CAS CSCD 北大核心 2013年第6期26-30,共5页 Electronic Components And Materials
基金 国家自然科学基金资助项目(No.50972024 No.60871049)
关键词 频率特性 介电调谐 介电损耗 介电常数 铌酸锌铋(BZN) 钛酸锶钡(BST) frequency response dielectric tunability dielectric loss permittivity bismuth zinc niobate (BZN) barium strontium titanate (BST)
  • 相关文献

参考文献24

  • 1COURREGES S,LACROIX B,AMADJIKPE A,et al.Back-to-backtunable ferroelectric resonator filters on flexible organic substrates[J].IEEE Trans Ultrason Ferroelectr Freq Control,2010,57(6):1267-1275.
  • 2NORLING M,VOROBIEV A,JACOBSSON H,et al.A low-noisek-band vco based on room-temperature ferroelectric varactors[J].IEEETrans Microwave Theory Tech,2007,55(2):361-369.
  • 3ACIKEL B,TRALOR T R,HANSEN P J,et al.A new high performancephase shifter using BaxSr1-xTiO3 thin films[J].IEEE Microwave WirelCompon Lett,2002,12(7):237-239.
  • 4TOMBAK A.A Ferroelectric-capacitor-based tunable matching networkfor quad-band cellular power amplifiers[J].IEEE Trans MicrowaveTheory Tech,2007,55(2):370-375.
  • 5BAO P,JACKSON T J,WANG X,et al.Barium strontium titanate thinfilm varactors for room-temperature microwave device applications[J].JPhys D:Appl Phys,2008,41(6):063001.
  • 6REN W,TROLIER-MCKINSTRY S,RANDALL C A,et al.Bismuthzinc niobate pyrochlore dielectric thin films for capacitive applications[J].J Appl Phys,2001,89(1):767-774.
  • 7LU J,STEMMER S.Low-loss,tunable bismuth zinc niobate filmsdeposited by RF magnetron sputtering[J].Appl Phys Lett,2003,83(12):2411-2413.
  • 8YAN L,KONG L B,CHEN L F,et al.Ba0.5Sr0.5TiO3-Bi1.5Zn1.0Nb1.5O7composite thin films with promising microwave dielectric properties formicrowave device applications[J].Appl Phys Lett,2004,85(16):3522-3524.
  • 9TIAN H,WANG Y,WANG D,et al.Dielectric properties and abnormalC-V characteristics of Ba0.5Sr0.5TiO3-Bi1.5ZnNb1.5O7 composite thin filmsgrown on MgO(001)substrates by pulsed laser deposition[J].Appl PhysLett,2006,89(14):142905.
  • 10FU W,WANG H,CAO L,et al.Bi1.5Zn1.0Nb1.5O7/Mn-dopedBa0.6Sr0.4TiO3 heterolayered thin films with enhanced tunableperformance[J].Appl Phys Lett,2008,92(18):182910.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部