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Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C4F8/Ar Dual-Frequency Capacitively Coupled Plasma 被引量:1

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摘要 Dry etching of 6H silicon carbide (6H-SiC) wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma (DF-CCP) was investigated. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy (OES) was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency (LF) source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films' deposition, and reduce surface residues. Dry etching of 6H silicon carbide (6H-SiC) wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma (DF-CCP) was investigated. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy (OES) was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency (LF) source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films' deposition, and reduce surface residues.
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2013年第10期1066-1070,共5页 等离子体科学和技术(英文版)
基金 supported by National Natural Science Foundation of China (Nos. 10975105, 11275136, 10975106, 11175126, 11204266 and 11075114) the National Magnetic Confinement Fusion Science Program of China (Nos. 2010GB106000, 2010GB106009), the Open Project of State Key Laboratory of Functional Materials for Information and Qing Lan Project, a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions and the Program for graduates Research & Innovation in University of Jiangsu Province, China (No. CX10B-031Z)
关键词 SIC plasma etching dual-frequency capacitively coupled plasma X-ray photoelectron spectroscopy optical emission spectroscopy SiC plasma etching dual-frequency capacitively coupled plasma X-ray photoelectron spectroscopy optical emission spectroscopy
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