Au/(Si/SiO_2)/p型Si结构的可见电致发光研究

Visible electroluminescence from Au/(Si/SiO_2)/p-Si structure

Si SiO2 薄膜采用射频磁控溅射技术制备 ,当正向偏压大于 5V时即可观测到来自不同Si层厚度的Au (Si SiO2 ) p Si结构在室温下的可见电致发光 ,其发光谱峰位均位于 6 6 0nm处 ,测得的各种偏压下的发光峰位不随正向偏压的升高而移动。实验结果表明光发射主要来自于SiO2 层中的发光中心上的复合发光。

Si/SiO 2 films have been grown using the RF magnetron sputtering technique. Visible electroluminescence(EL) has been observed from Au film/ (Si/SiO 2)/p Si structures at a forward bias above 5V. Electroluminescence peak located around 660nm for all the structures,and the EL peak positions depend hardly on the thicknesses of Si layers and the increasing of import power. The experimental results indicated that light emission originates mainly from the luminescence centres in the SiO 2 layers.