期刊文献+

纤锌矿ZnO/Mg_xZn_(1-x)O量子阱中的极化子效应 被引量:2

Effect of Polaron in Wurtzite ZnO/Mg_xZn_(1-x)O Quantum Well
下载PDF
导出
摘要 采用Lee-Low-Pines(LLP)变分法,研究了纤锌矿ZnO/Mgx Zn1-x O量子阱中自由极化子能量和电子-声子相互作用对极化子能量的影响,给出极化子基态能量、跃迁能量,以及电子-声子相互作用对基态能量的贡献随阱宽和组分的变化关系.结果显示,极化子基态能量和跃迁能量随着量子阱宽度的增大而减小,最后趋近于ZnO体材料的三维值.在窄阱中,界面声子对极化子能量的贡献大于定域声子的贡献,而在宽阱中,情况正好相反.纤锌矿ZnO/Mgx Zn1-x O量子阱中电子-声子相互作用对极化子能量的贡献比较大,远大于GaAs/AIx Ga1-x As量子阱中的相应值,因此讨论电子态能级问题时应考虑电子-声子相互作用. Energy of polaron and effects of the electron-phonon interaction to the energy in wurtzite ZnO/MgxZn1-xO quantum well are investigated by using modified Lee-Low-Pines (LLP) variational method. The function of the ground state energy, transition energy of polaron,and the contribution of the electron-phone interaction to the energy with the well width and composition are given. The results show that the ground state energy and transition energy of polaron in ZnO/Mg^Znl_~O quantum well decreases with increasing well width,and finally approaches to the bulk value of ZnO. The contributions of the inter- face modes to polaron energy are larger than that of the contribution of the confined phonon modes for narrow well, but the case is contrary for width wells. The contribution of electron-phone interaction to the energy of polaron in wurtzite ZnO/MgxZn1-x0 quantum well structure is very large, the value is much larger than that of GaAs/AIxGa1-xAs quantum well structure, so it should be considered when the problem of election state is discussed in this structure.
出处 《内蒙古师范大学学报(自然科学汉文版)》 CAS 北大核心 2013年第5期527-531,共5页 Journal of Inner Mongolia Normal University(Natural Science Edition)
基金 国家自然科学基金资助项目(11264027) 内蒙古师范大学"十百千"人才培养基金项目(RCPY-2-2012-K-039) 内蒙古自治区2013年硕士研究生科研创新项目(S20131013502)
关键词 纤锌矿ZnO量子阱 电子—声子相互作用 极化子效应 极化子能量 wurtzite quantum well ZnO electron-phonon interaction effect of polaron energy of polaron
  • 引文网络
  • 相关文献

参考文献20

  • 1宿世臣,吕有明,梅霆.m面蓝宝石上ZnO/ZnMgO多量子阱的制备及发光特性研究[J].物理学报,2011,60(9):536-539. 被引量:4
  • 2Gruber T,Kirchner C,Kling R, et al. ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic apphcatlons m the blue and UV spectral region [J]. ApplPhys Lett,2004,84(26)~5359-5361.
  • 3Nomura K, Ohta H,Ueda K,et al. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semicondu- ctor [J]. Science,2003,300(5623) :1269-1272.
  • 4Ozgur U,Alivov Y I,Liu C,et al. A comprehensive review of ZnO materials and devices [J]. Appl Phys,2005,98(4).. 041301-041301-103.
  • 5Bagnall D M,Chen Y F,Zhu Z, et al. High temperature excitonic stimulated emission from ZnO epitaxial layers [J]. Appl Phys I.ett, 1998,73(8) : 1038-104.
  • 6刘红霞,周圣明,李抒智,杭寅,徐军,顾书林,张荣.柱状ZnO阵列薄膜的生长及其发光特性[J].物理学报,2006,55(3):1398-1401. 被引量:24
  • 7Lee B C, Kim K V,Stroscio M A. Electron-optical-phonon scattering in wurtzite crystals [J]. Phys Rev B, 1997,56 (3) : 997-1000.
  • 8段旭来,赵凤岐,包乌日塔,吴海岩.纤锌矿GaN/AlN量子阱中的极化子[J].内蒙古师范大学学报(自然科学汉文版),2010,39(4):372-376. 被引量:2
  • 9邢德胜,赵凤岐.纤锌矿GaN/AlN抛物量子阱中激子的极化子效应[J].内蒙古师范大学学报(自然科学汉文版),2013,42(4):431-436. 被引量:3
  • 10Bikowski A, Ellmer K. Electrical transport in hydrogen-aluminium Co-doped ZnO and Znl-xMg~O films: Relation to film structure and composition [J]. J Appl Phys, 2013,113 (5) : 053710-053710-6.

二级参考文献96

共引文献32

同被引文献31

  • 1林益梅,叶志镇,陈兰兰,朱丽萍,黄靖云.ZnO薄膜的缺陷研究进展[J].真空科学与技术学报,2006,26(5):385-391. 被引量:6
  • 2Fan X M,Lian J S,Guo Z X,et al.Microstructure and photoluminescence properties of ZnO thin films grown by PLD on Si(111)substrates[J].Applied Surface Science,2005,29:176-181.
  • 3Park C H.Origin of p-type doping difficulty in ZnO:The impurity perspective[J].Phys Rev B,2002,66(7):073202-1-3.
  • 4Yamamoto T.Physics and control of valence states in ZnO by codoping method[J].Physica B,2001,3022303:155-162.
  • 5Butkhuzi T V.Optical and elect rical properties of radical beam gettering epitaxy grown n-and p-type ZnO singlecrystals[J].J Cryst Crowth,1992,117:366-369.
  • 6Tuzemen S,Xiong Gang,Wilkinson John,et al.Production and properties of p-n junctions in reactively sputtered ZnO[J].J Physica B,2001,308:1197-1200.
  • 7Gang X,Willkinson J,Mischuck B.Control of p-and n-type conductivity in sputter deposition of undoped ZnO[J].Appl Phys Lett,2002,80:1195-1197.
  • 8Du G T,Ma Y,Yang S R,et al.Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy[J].Appl Phys lett,2005,87(21):213103-1-3.
  • 9Zeng Y J.Dopant source choice for formation of p-type ZnO[J].Appl Phys Lett,2006,88:262103-262105.
  • 10Oh M S,Kim S H,Seong T Y.Growth of nominally undoped p-type ZnO on Si by pulsed laser deposition[J].Appl Phys Lett,2005,87:122103-1-3.

引证文献2

二级引证文献3

;
使用帮助 返回顶部