摘要
介绍了用脉冲激光沉积 (PLD)方法制备AlN薄膜的工作 ,在Si(10 0 )衬底上得到了光滑平整、透明度高的AlN薄膜 ,由实验结果拟合得到能隙宽度为 5 7eV。考察了衬底温度和退火温度的影响。
This paper describes the preparation of AlN films using pulsed laser deposition. Smooth and highly transparent AlN films were deposited on Si (100) substrates. The gap of the films was determined to be 5.7 eV. The effects of substrate temperature and annealing temperature were also examined.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2001年第3期272-274,共3页
Chinese Journal of Lasers
基金
国家自然科学基金! (6 98780 0 4)
上海市科技发展基金! (98JC140 11)资助项目
关键词
脉冲激光沉积
氮化铝
激光烧蚀
薄膜
Aluminum nitride
Annealing
Laser ablation
Pulsed laser deposition
Substrates
