双极晶体管结温分布不均匀性的电学测量方法

Measuring Junction Temperature Inhomogeneity of Bipolar Transistors by Electrical Method

用Δ VBE法测得的结温是器件有源区某一点的温度 ,流经该点的测试电流密度等于流经整个芯片的平均测试电流密度。测量结温随测试电流变化而变化 ,小测试电流测得的结温高 ,大测试电流测得的结温低 ,测得的结温的变化范围小于芯片上实际的最低结温和最高结温之差。根据晶体管测量结温的这一性质可以半定量地判断晶体管结温分布的均匀性。

For inhomogeneous junction temperature, the junction temperature measured by ΔVBE method varies from high to low increasing test current. Range of the junction temperature measured by ΔVBE increases, with increasing the junction temperature inhomogeneity. This feature can be used to estimate the junction temperature inhomogeneity of bipolar transistors by electrical method.