摘要
阐述了垂直腔面发射激光器(VCSEL)的工作原理及器件的设计方案.并设计出激射波长为 980 nm,InGaAs/GaAs多量子阱作为发光材料,氧化物限制电流,衬底面出光的基横模低阈值的器件 结构.
The principle and design of vertical cavity surface emitting lasers are described in this paper. And a low threshold structure with InGaAs/GaAs MQW as active layers, oxide as current confinement layer is worked out, the light of which for fundament mode emits from substrate with wavelength at 980 nm.
出处
《华南师范大学学报(自然科学版)》
CAS
2001年第3期33-39,共7页
Journal of South China Normal University(Natural Science Edition)
基金
2000年国家科技攻关计划(00-068)