期刊文献+

垂直腔面发射激光器的原理与设计 被引量:1

PRINCIPLE AND DESIGN OF VERTICAL CAVITY SURFACE EMITTING LASERS
下载PDF
导出
摘要 阐述了垂直腔面发射激光器(VCSEL)的工作原理及器件的设计方案.并设计出激射波长为 980 nm,InGaAs/GaAs多量子阱作为发光材料,氧化物限制电流,衬底面出光的基横模低阈值的器件 结构. The principle and design of vertical cavity surface emitting lasers are described in this paper. And a low threshold structure with InGaAs/GaAs MQW as active layers, oxide as current confinement layer is worked out, the light of which for fundament mode emits from substrate with wavelength at 980 nm.
出处 《华南师范大学学报(自然科学版)》 CAS 2001年第3期33-39,共7页 Journal of South China Normal University(Natural Science Edition)
基金 2000年国家科技攻关计划(00-068)
关键词 半导体激光器 面发射激光器 INGAAS 氧化物 垂直腔面发射激光器 工作原理 设计 semiconductor lasers surface emitting lasers InGaAs Oxide DBR
  • 引文网络
  • 相关文献

参考文献1

  • 1凯西HC 帕尼什MB.异质结构激光器(上册)[M].北京:国防工业出版社,1983..

同被引文献11

  • 1李忠辉,李梅,王玲,高欣,王玉霞,张兴德.InGaAsP/InGaP/GaAs SQW激光器的腔长对J_(th)和η_d的影响[J].半导体光电,2002,23(2):90-91. 被引量:3
  • 2Jewll J L, Harbison J P, scherer A, et al. Verticalcavity surface-emitting lasers: design, growth,fabrication, characterization [J ]. IEEE J. Quant. Electron. ,1991,27(6):1 332-1 346.
  • 3Hayashi Y, Mukaihara T, Hartori N, et al. Lasing characteristics of low threshold oxide confinement InGaAs/GaAlAs vertical cavity surface emitting lasers [ J ]. IEEE Photon. Technol. Lett., 1995, 7(11): 1 234-1 236.
  • 4Qian Y,Zhu Z H, Lo Y H, et al. Long wavelength (1. 3μm) vertical cavity surface emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement [J]. Appl. Phys. Lett. , 1997,71 (1) : 25- 27.
  • 5Koyama F, Kinoshita S, Iga K. Surface emitting semiconductor lasers [ J ]. IEEE J. Quantum Electron. ,1988,24(9):1 845-1 855.
  • 6Detemple T A, Herzinger C M. On the semiconductor laser lograrithmic gain-current density relation [ J ]. IEEE J. Quantum Electron. ,1993,29(5) : 1 246-1 252.
  • 7Detemple T A, Herzinger C M. On the semiconductor laser lograrithmic gain-current density relation [ J ]. IEEE J. Quantum Electron. ,1993, 29(5) :1 246-1 252.
  • 8Mieyeville F, Jacquemod G, Galliot F, et al. A behavioural opto-electro-thermal VCSEL model for simulation of optical links [J]. Sensors and Actuators A, 2001,88:209-219.
  • 9Soda H, Motegi Y, Iga K. GaInAsP/InP surface emitting injection lasers with short cavity length[J]. IEEE J. Quantum Electron., 1983, 19 (6):1035- 1 041.
  • 10潘炜,张晓霞,罗斌,吕鸿昌,陈建国.多量子阱VCSELs阈值特性的分析[J].激光杂志,1999,20(3):62-64. 被引量:6

引证文献1

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部