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a-Si:H薄膜光衰效应的研究 被引量:1

THE RELATIONSHIP OF STRUCTURAL PROPERTIES AND PHOTOINDUCED DEGRADATION OF HYDROGENATED AMORPHOUS SILICON
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摘要 利用红外光谱 (IR)和氢释放谱相结合的方法 ,研究了a-Si:H的结构与其光衰效应的关系 ,结果发现 :随着Br含量的增加 ,IR谱中的 2 10 0cm-1峰以及H释放谱中的低峰逐渐减弱 ,以至完全消失 说明a-Si:H网络中的织构组织由于Br的掺入而逐渐消失 ,a-Si:H由均匀的Si-H组成 材料的光暗电导率比显著增加 ,达 5× 10 4,材料在 5 0 0℃以上基本无H释放 。 The structure properties of bromine(Br) doped a-Si:H have been investigated by infrared(IR) and hydrogen evolution(h-evolution) spectra The experimental results show that with the increase of Br introduction, the peak intensity of IR at 2100cm -1 and fhat of H evolution on at the temperature of 320° decrease and disappear when the partial pressure of Bromine exceeds 103 Pa, which results in the homogeneous distribution of H in the film in the form of Si-H The ratio of photo to dark conductivity of Br doped a-Si:H reaches 5×10 4, indicating good photosensitivity The film is stable below the temperature of 500℃ as the H-evolution spectrum shows
出处 《山东工业大学学报》 2001年第5期428-432,共5页
关键词 光衰效应 IR谱 薄膜 A-SI:H 氢释放谱 Optical effects Silicon Bromine
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