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连续40W 808nm量子阱线阵二极管激光封装技术 被引量:10

Package Technique for CW 40 W 808 nm Quantum-well Linear Array Diode Laser
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摘要 研究了高功率二极管激光 (LD)封装中的铟焊料蒸镀工艺和回流焊工艺对芯片焊接状态的影响。在数值模拟和实验研究的基础上 ,优化了冷却器结构设计 ,研制出具有热阻低、压降小的铜微通道液体冷却器 ,可以满足热耗散功率大于 6 0W的二极管激光器散热冷却需要。通过封装实验得到输出功率 40W ,波长 80 8nm ,谱线半高宽<2nm ,电光效率近 40 %的连续线阵二极管激光器。用该激光器进行了抽运Nd∶YAG固体激光实验 ,在抽运功率为 40W时 ,获得 11 8W单横模固体激光输出 ,光 光效率约为 30 %。 The effects of indium-solder coating and reflow soldering technique on diode bar soldering state are studied. Based on numerical simulation and experimental researches, the design of cooler structure is optimized and the copper micro channels water cooler with low thermal resistance, low pressure is fabricated, which can meet the needs of cooling diode laser with more than 60 W thermal dissipating power. A CW linear array diode laser with output power of 40 W, wavelength of 808 nm, spectral width of less than 2 nm, E-O efficiency of 40% is achieved by packaging experiment. The experiment of pumping Nd:YAG solid-state laser by the diode is carried out. The output power is 11.8 W with single transverse mode and 30% optical-optical efficiency at pumping power of 40 W.
出处 《中国激光》 EI CAS CSCD 北大核心 2002年第6期513-516,共4页 Chinese Journal of Lasers
关键词 量子阱 线阵二极管 激光 封装技术 二极管激光 铜微通道冷却器 铟焊料 回流焊 Arrays Cooling systems Packaging Semiconductor quantum wells Soldering
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