摘要
采用有效质量近似和绝热近似 ,计算了量子阱中InAs/In1-xGaxAs自组织量子点 (点在阱中 ,DWELL)的电子结构和光学性质 .结果表明 ,电子能级随受限势的增大而升高 ,并随着量子点的尺寸的增大而降低 ,而且量子阱的宽度和量子点浸润层的厚度增加也会导致能级有所降低 .
The effective mass approximation and adiabatic approximation are applied to calculate the electronic energy spectra of InAs/In 1- x Ga x As self assembled quantum dots in a well(DWELL) structure under various structural parameters. Results show that the energy spectra structure is sensitive to the structural parameter variation of quantum dot (QD) and quantum well (QW). The computation suggests that the QDs with smaller size and higher confining potential have a higher electron and hole energy level which result in the PL peak wavelength a small blue shift, the narrower QW and thinner self assembled QD wetting layer (WL) have similar conclusion. The photoluminescence (PL) spectra are calculated also.
出处
《北京师范大学学报(自然科学版)》
CAS
CSCD
北大核心
2002年第4期500-505,共6页
Journal of Beijing Normal University(Natural Science)
基金
教育部博士点基金资助项目 (960 0 2 70 3)