直流电弧等离子体喷射法制备氮化碳薄膜研究

Research on Preparation of Carbon Nitride Films by DC Arc Plasma Jet Method

以H2、N2和CF4气体为前驱体,用直流电弧等离子体喷射设备在不同基底温度条件下于钼/金刚石过渡层基底上制备了氮化碳薄膜。利用扫描电子显微镜(SEM)、能谱仪(EDS)、X射线衍射仪(XRD)对表面形貌和组织成分进行了表征。结果表明,当基底温度为900℃时,所沉积材料已初具晶型;所沉积材料含有α-C3N4和β-C3N4相成分。同时,提出在金刚石表面制备氮化碳时金刚石相刻蚀和氮化碳相生长同时进行的模型,较好地解释了不同基底温度条件下的膜材料沉积现象。

Carbon nitride films were prepared by DC arc plasma jet method on Mo / diamond transition layer of different substrate temperatures using H2,N2 and CF4as precursors. The films were characterized by scanning electron microscopy（ SEM）,energy dispersive spectroscopy（ EDS） and X-ray diffraction spectra（ XRD）. The results show that the carbon nitride had a preliminary crystal form when the temperature of substrate was 900 ℃; α-C3N4 and β-C3N4 phases were contained in the films.Meanwhile,a hypothesis that diamond phase etched and carbon nitride phase growing simultaneously was put forward,explaining the different experimental results of different substrate temperatures.